Vapor phase self-assembly of molecular gate dielectrics for thin film transistors.
نویسندگان
چکیده
Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.
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ورودعنوان ژورنال:
- Journal of the American Chemical Society
دوره 130 24 شماره
صفحات -
تاریخ انتشار 2008